MeV-UED Specifications

Time-resolved measurement of electron–phonon coupling

Measurement of Debye-Waller effect on multiple lattice reflections

Time-resolved studies of momentum resolved phonon dynamics

Thermal diffuse scattering measurement

Measurement of melting dynamics

Single-shot pump–probe measurements

Three dimensional measurement of structural dynamics

Measurements of positional change of multiple lattice reflections at different sample orientations

Measurement of chemical photodissociation or photoisomerization

Gas-jet UED

Measurement of novel phase of quantum materials

Cryo-UED

Electron beam energy

2 - 4 MeV

Repetition rate

Single shot → 360 Hz*

Charge per pulse

1 - 100 fC (10⁴ - 10⁶ electrons)

Beam emittance

2 - 20 nm-rad

Bunch length

<150 fs FWHM**

Momentum resolution

<0.17Å^-1

Beam spot size

100-200 um (typical), 10 um (FWHM) focused

Repetition rate

Single shot → 360 Hz (1080 Hz)*

Wavelength range

200 nm, 266 nm, 400 nm, 800nm, 240 nm - 2 µm tunable, 3-15 µm tunable

Typical optical pulse energy

> 8 mJ @ 800 nm
> 0.8 mJ @ 400 nm
> 0.08 mJ @ 266 nm
~ 16  µJ @ 200 nm
For pulse energies at specific wavelengths (e.g. 260 nm – 750 nm) or other details please contact Patrick Kramer

Nominal pulse duration

75 fs (FWHM)

Optical delay

0 - 1.5 ns (physical delay stage) Contact laser group about longer delays.

Optical spot size

200 - 1500 µm (FWHM)

Phosphor thickness

50-100 um

Point-spread-function

85 um (rms)

Pixel size

13 x 13 um²

Sensor size

1024 x 1024

Data format

.tiff

Pixel well depth

80k e^-

Pixel size

100 x 100  um²

Frame rate

360 Hz

Sensitive area

5 x 5  cm²

Gain mode

3 fixed plus 2 with auto ranging and programmable switch point

S/N in High Gain per MeV electron

>100